• SiC（碳化硅）MOSFET
• Package : TO-263CA-7LSHYAD
• Drain-source Voltage[V] : 1700
• Drain-source On-state Resistance(Typ.)[mΩ] : 1150
• Generation : 2nd Gen (Planar)
• Drain Current[A] : 3.9
• Total Power Dissipation[W] : 39
• Junction Temperature (Max.) [°C] : 175