描述
• Qualified to AEC-Q101
• Low on-resistance
• Fast switching speed
• Fast reverse recovery
• Easy to parallel
• Simple to drive
• Pb-free lead plating ; RoHS compliant
SKU : f3510366d12a
• SiC（碳化硅）MOSFET
• Package : TO-263-7L
• Drain-source Voltage[V] : 1200
• Drain-source On-state Resistance(Typ.)[mΩ] : 36
• Generation : 4th Gen (Trench)
• Drain Current[A] : 40
• Total Power Dissipation[W] : 150
• Junction Temperature (Max.) [°C] : 175
支持顺丰速运，最快隔日达
同型号发票，一对一
老客户享受更优惠的价格
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