描述
• Qualified to AEC-Q101
• Low on-resistance
• Fast switching speed
• Fast reverse recovery
• Easy to parallel
• Simple to drive
• Pb-free lead plating ; RoHS compliant
SKU : 52e3c91b47df
• SiC（碳化硅）MOSFET
• Package : TO-263-7L
• Drain-source Voltage[V] : 750
• Drain-source On-state Resistance(Typ.)[mΩ] : 26
• Generation : 4th Gen (Trench)
• Drain Current[A] : 51
• Total Power Dissipation[W] : 150
• Junction Temperature (Max.) [°C] : 175
支持顺丰速运，最快隔日达
同型号发票，一对一
老客户享受更优惠的价格
微信 / WeChat
微信 / WeChat
AI robot
