DP1000B1700TU103727

SKU : ghc1erkg0ejn

• Danfoss
• 1000 A
• 1700 V
• 2 x IGBT Modules

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描述

Absolute Maximum Ratings (@ Tj=25°C unless otherwise specified)
Parameter Conditions Tj        Symbol Value Unit
IGBT T1, T2
collector-to-emitter voltage V GE ≤ 0 V    VCES 1700 V
collector current TC = 100 °C 175°C IC 1000 A
pulse collector current pulse 1 ms I CM 2000 A
gate-to-emitter voltage    VGES ±20 V
junction temperature Tj -40…+175 °C
product reliability results are valid for Tj=150 ° C
operation temperature     Tj,op -40…+150 °C
short-circuit characteristic VCE(max) = VCES – Lσ * Δi/Δt 150°C t SC 10 µs
V CC = 1000 V
VGE(on) ≤ 15 V
DIODE D1, D2
diode reverse voltage VR 1700 V
diode forward current TC = 45 °C 175°C IF 1000 A
pulse diode forward current pulse 1 ms IFM 2000 A
I2t value
sinusoidal waveform
VR = 0 V
tP = 10 ms
150°C I2t 140 kA2s
junction temperature Tj -40…+150 °C
product reliability results are valid for Tj=150 ° C
operation temperature     Tj,op   -40…+150 °C
NTC R
power dissipation P25 20 mW
operation temperature                                                                                                        Top          -40…+175

Housing/Module (material of baseplate is Cu; material of insulation is Al2O3)

°C
current   It(RMS) 1000 A
all required pins must be connected
storage temperature     Tj,stg -40…+150 °C
isolation testvoltage AC voltage     Visol 4000 V
f = 50 Hz
1 minute
creepage distance terminal to heatsink
terminal to terminal
43
33.1
mm
mm
clearance distance terminal to heatsink 24.2 mm
terminal to terminal 19 mm
module stray inductance     Lσce 10 nH
module lead resistance terminal to chips 0.25 mΩ

其他信息

重量 591.5 克
尺寸 130 × 90 × 45 厘米

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