• Product Status: Active
• BVDSS (V): 1200
• RDS (on) (mΩ)Typ: 9
• RDS (on) (mΩ) Max: 11.7
• ID (A) @25°C: 250
• ID (A) @100°C: 180
• Configuration: Half-Bridge
• VGS (V): -4/+18
• VGS(th) (V) Typ: 2.7
• SiC MOSFET Modules