SICSC2A4D0N120G3MH

SKU : 4649f8b730fe

• Brand: MCC
• Package: C2A
• Status: Pre-Release
• VDS (V): 1200
• VGS (V): -10/+22
• ID (A): 400
• @VGS=18V (O): 0.005
• VGS(th) Min (V): 2
• VGS(th) Max (V): 4
• VSD (V): 1.51
• IDM(A): 630
• Tj [max] (°C): 175

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描述

• MCC SiC MOSFET Modules deliver exceptional performance with high blocking voltage, low conduction and switching losses, high-frequency capability, and reliable high-temperature operation. Built with MCC’s advanced silicon carbide (SiC) MOSFET technology, these modules achieve superior power density for demanding industrial applications — including inverters and converters for railway systems, photovoltaic inverters, energy storage systems, renewable energy solutions, OBC, Charging Station and beyond.

• They are offered in Automotive and industry-standard packages, integrate the latest generation of SiC MOSFET chip technologies to ensure optimal efficiency, compact design, and long-term reliability.

其他信息

重量 13.66 克
尺寸 21.5 × 1.32 × 6.32 厘米

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