• Product Status: Single
• BVDSS (V): 1200
• RDS (on) (mΩ)Typ: 3
• RDS (on) (mΩ) Max: 3.9
• ID (A) @25°C: 1050
• ID (A) @100°C: 700
• Configuration: -4/+15
H
• VGS(th) (V) Typ: 3
• SiC MOSFET Modules