• Product Status: Active
• BVDSS (V): 1200
• RDS (on) (mΩ)Typ: 2.5
• RDS (on) (mΩ) Max: 3.3
• ID (A) @25°C: 900
• ID (A) @100°C: 600
• Configuration: Half-Bridge+SiC SBD
• VGS (V): -4/+15
• VGS(th) (V) Typ: 2.4
• SiC MOSFET Modules